Synopsis
The first book devoted entirely to HBTs, this reference examines the basic concept, standard and advanced structures, noise performance, reliability issues, and simulation. The book's main emphasis is on device physics and its mathematical representations, through which the operational characterization of AlGaAs/GaAs HBTs can be understood. It enables device engineers, device researchers, and circuit designers to increase their knowledge of HBT principles and behavior with significantly less literature research time, and to design optimal HBTs with minimal design time. Extensively referenced, with 150 illustrations and 250 equations.
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About the Author
FRANK SCHWIERZ, PhD, is head of the RF & Nanoelectronics Research Group at Technische UniversitAt (TU) Ilmenau, Germany.
JUIN J. LIOU, PhD, is a professor in the School of Electrical and Computer Science at the University of Central Florida.
"About this title" may belong to another edition of this title.
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Principles and Analysis of Aigaas/GAAS Heterojunction Bipolar Transistors
Published by
Artech House Publishers, 1996
ISBN 10: 089006587X
ISBN 13: 9780890065877
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PRINCIPLES AND ANALYSIS OF AlGaAs/GaAs Heterojunction Bipolar Transistors
Published by
Artech House, Boston / London, 1996
ISBN 10: 089006587X
ISBN 13: 9780890065877
Used
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Hardcover. Condition: Near Fine. Dust Jacket Condition: No Dust Jacket. 1st. (USA) 1st printing. Owner's name to back of cover, no other markings, Near Fine; no dust jacket as published. Hardcover, 227pp, index, graphs, diagrams. The first book devoted entirely to HBTs, this reference examines the basic concept, standard and advanced structures, noise performance, reliability issues, and simulation. It's main emphasis is on device physics and its mathematical representations, through which the operational characterization of AlGaAs/GaAs HBTs can be understood. (1.9 JM HOJ 302/2 Size: 8vo - over 7¾" - 9¾". Seller Inventory # 07129
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Principles and Analysis of Aigaas/Gaas Heterojuntion Bipolar Transistors
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PRINCIPLES AND ANALYSIS OF AIGAAS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS
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