The 17th International Symposium on Gallium Arsenide and related Compounds was held in Jersey, Channel Islands, on 24 - 27 September 1990. This volume contains a total of 112 papers, including four invited papers and a number of late news papers. The papers are divided into eight chapters relating to various aspects of the subject. These include bulk and epitaxial growth, characterization, processing, electron transport, and both high speed and opto-electronic devices. Current research and recent developments in these areas are covered. Particularly apparent is the increasing importance of III-V devices. These proceedings will be invaluable to researchers in solid state semiconductor and device physics, both in industry and academia, as they represent the latest developments in this exciting and rapidly developing field.
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The proceedings of the 17th International Symposium on Gallium Arsenide and Related Compounds, held in Jersey in September 1990, are detailed in this volume. Topics discussed include processing techniques, electron transport, opto-electronic devices and high speed devices.
"About this title" may belong to another edition of this title.
Seller: Mahler Books, PFLUGERVILLE, TX, U.S.A.
Hardcover. Condition: As New. This book is brand new; never used or opened. No remainder marks. Seller Inventory # 080605-27a-my160
Seller: Mahler Books, PFLUGERVILLE, TX, U.S.A.
Hardcover. Condition: New. This book is brand new; never used or opened. No remainder marks. Seller Inventory # 080605-27-my160