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Process Technology for Silicon Carbide Devices (Materials, Circuits and Devices) - Hardcover

 
9780852969984: Process Technology for Silicon Carbide Devices (Materials, Circuits and Devices)

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Synopsis

Silicon carbide (SiC) is a wide bandgap semiconductor whose properties make it suitable for devices and integrated circuits operating at high voltage, high frequency and high temperature. This second book in the Processing series explains why SiC is so useful in electronics and gives clear guidance on the various processing steps. Growth, doping, etching, contact formation and dielectrics are all described in detail. The final chapter explains how to integrate the processing steps, and shows typical device cross-sections for over 20 different devices. Engineers who are developing systems for the fabrication of SiC devices are in need of guidance from experts in academia and the industry who have been pioneering the field: the book is designed as an advanced tutorial and reference for this purpose. A glossary of terms used in SiC technology is included.

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About the Author

Carl-Mikael Zetterling received the M.Sc.E.E. and Ph.D. degrees from KTH, the Royal Institute of Technology in Stockholm, in 1991 and 1997, respectively. He is currently associate professor in the Department of Microelectronics and Information Technology. He is director of studies at the department, and teaches VLSI process technology and modelling of VLSI devices. His field of research is process technology and device design of high-frequency and high-power devices in wide bandgap materials, especially SiC. He has been working experimentally on SiC since 1992, and has contributed to over 60 publications. He was a visiting scholar for one year at the Center for Integrated Systems (CIS) at Stanford University, USA, and has also been to Japan as visiting professor (Kyoto University in 1998 and Kyoto Institute of Technology in 2001).

Synopsis

Silicon carbide (SiC) is a wide-bandgap semiconductor whose properties make it suitable for devices and integrated circuits operating at high voltage, high frequency and high temperature. This study explains why SiC is so useful in electronics; offers guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics and more); and describes how these are integrated in device manufacture.

"About this title" may belong to another edition of this title.

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