The MOCVD Challenge describes how to use MOCVD to grow materials and devices, in particular indium phosphide, gallium indium arsenide and gallium indium arseno phosphide. It contains detailed descriptions of reactors, starting materials and growth conditions. It discusses lattice-matched materials, strained layers and growth on non-matched substrates such as silicon. It includes results which include the growth, characterization, application of heterojunctions, quantum wells and superlattices based on these compounds. It concludes with applications for indium phosphide semiconductors such as lasers and photodetectors and for electronic components such as optical fibres and satellite communication systems. Together with The MOCVD Challenge: Volume 2 it forms a valuable reference for users of MOCVD, and those evaluating MOCVD for use in their research. Written for physicists, materials scientists, electronics and electrical engineers involved in semiconducting materials and as-grown device research.
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Developed primarily for researchers and engineers in semiconductor physics and electronics, this text describes the rapidly developing field of the growth, characterization and applications of InP and related III-V semiconductor compounds. Special attention is given to the metal-organic-chemical-vapour deposition (MOCVD) method for growing semiconductor compounds, with detailed descriptions of reactors, starting materials and growth conditions. The various methods of structural, electronic and optical characterization are treated at a level comprehensible to non-specialists. Numerous examples of recent results are presented, many from the author's own work. Manijeh Razeghi was the winner of the Science and Technology, IBM Europe Prize in 1986.
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