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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series) - Hardcover
Synopsis
This book was the first to be devoted to the compact modeling of RF power FETs.
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About the Author
Peter H. Aaen is the Modeling Group Manager in the RF Division at Freescale Semiconductor, Inc., Tempe Arizona. Jaime A. Pia is the Design Organization Manager in the RF Division at Freescale in the RF Division at Freescale Semiconductor, Inc., Tempe Arizona. John Wood is Senior Technical Contributor responsible for RF CAD and Modeling in the RF Division at Freescale Semiconductor, Inc., Tempe, Arizona. He is a Fellow of the IEEE.
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Modeling and Characterization of RF and Microwave Power FETs
Published by
Cambridge University Press, 2007
ISBN 10: 0521870666
ISBN 13: 9780521870665
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Hardcover
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Modeling and Characterization of RF and Microwave Power FETs
Published by
Cambridge, Cambridge, 2007
ISBN 10: 0521870666
ISBN 13: 9780521870665
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Published by
Cambridge University Press, 2007
ISBN 10: 0521870666
ISBN 13: 9780521870665
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Hardcover
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Modeling and Characterization of RF and Microwave Power FETs (Hardcover)
Published by
Cambridge University Press, Cambridge, 2007
ISBN 10: 0521870666
ISBN 13: 9780521870665
New
Hardcover
Seller: CitiRetail, Stevenage, United Kingdom
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Hardcover. Condition: new. Hardcover. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Seller Inventory # 9780521870665
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Modeling and Characterization of RF and Microwave Power FETs
Published by
Cambridge University Press, 2007
ISBN 10: 0521870666
ISBN 13: 9780521870665
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Published by
Cambridge University Press, 2007
ISBN 10: 0521870666
ISBN 13: 9780521870665
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Modeling and Characterization of RF and Microwave Power FETs
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Modeling and Characterization of RF and Microwave Power FETs
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Cambridge University Press, 2015
ISBN 10: 0521870666
ISBN 13: 9780521870665
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Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples.Über . Seller Inventory # 446951506
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Published by
Cambridge University Press, 2007
ISBN 10: 0521870666
ISBN 13: 9780521870665
New
Hardcover
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Modeling and Characterization of RF and Microwave Power FETs (Hardcover)
Published by
Cambridge University Press, Cambridge, 2007
ISBN 10: 0521870666
ISBN 13: 9780521870665
New
Hardcover
Seller: Grand Eagle Retail, Fairfield, OH, U.S.A.
Seller rating 5 out of 5 stars
Hardcover. Condition: new. Hardcover. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. Seller Inventory # 9780521870665
Quantity: 1 available