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Trond Ytterdal received the M.Sc. and Ph.D. degrees in electrical engineering from the Norwegian Institute of Technology, University of Trondheim, Trondheim, Norway, in 1990 and 1995, respectively. From 1995 to 1996, he was a Research Associate with the Department of Electrical Engineering, University of Virginia, Charlottesville. from 1996 to 1997, he was a Research Scientist with the Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY. from 1997 to 2000, he was a Senior ASIC Designer with Nordic VLSI, Trondheim. Since 2000, he has been on the faculty of the Norwegian University of Science and Technology (NTNU), Trondheim.
He is the author of more than 100 scientific papers in international journals and conference proceedings. He is a coauthor of the books Semiconductor Device Modeling for VLSI (Prentice Hall, 1993), Introduction to Device Modeling and Circuit Simulation (Wiley, 1998), and Device Modeling for Analog and RF CMOS Circuit Design (Wiley, 2003). He has been a contributor to several other internationally published books. He is also a co-developer of the circuit simulator AIM-Spice. His current research interests include design of analog and mixed-signal integrated circuits, modeling of deep sub micrometer MOSFETs, MESFETs, HFETs, and novel device structures for application in circuit simulators.Prof. Ytterdal is a member of the Norwegian Academy of Technological Sciences.
In order to keep up with global demand, microelectronics engineers are continually challenged to produce increasingly complex, high performance integrated circuits. The steady downscaling of MOSFET/CMOS technology has highlighted the need for a thorough understanding of the properties, potentials and limitations of the latest device models and technology. Presenting state-of-the-art MOSFET models, this book will prove a valuable reference and text for engineers striving to achieve first-time-right, reduced time-to-market silicon products.
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In order to keep up with global demand, microelectronics engineers are continually challenged to produce increasingly complex, high performance integrated circuits. The steady downscaling of MOSFET/CMOS technology has highlighted the need for a thorough understanding of the properties, potentials and limitations of the latest device models and technology. Presenting state-of-the-art MOSFET models, this book will prove a valuable reference and text for engineers striving to achieve first-time-right, reduced time-to-market silicon products.
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