The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, "surfactants"; analysis, both in situ and ex situ; strain adjustment methods; high quality buffers; modification of material properties by quantum wells and superlattices; and devices, such as novel concepts, processing, modelling and demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, should provide a wealth of information for all those interested in the future avenues of theory and applications in this field.
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