Analytical and Biomedical Applications of Ion-selective Field-effect Transistors (v.23) (Comprehensive Analytical Chemistry) - Hardcover
Synopsis
This latest volume of Wilson & Wilson's Comprehensive Analytical Chemistry presents a comprehensive, up-to-date account of the theory, design and fabrication of ion-selective field-effect transistors (ISFETs) and their analytical and biomedical applications. It encompasses not only the physicochemical phenomena which control the interaction between the solid-state transducer and the contacting electrolyte, but also the interaction between the sensor and the associated electronic system used to process the resultant signal. The introductory chapter summarizes the history of the development of ISFET devices. After an account of the fundamental principles of the MOS field-effect transistor in Chapter 2, the operational mechanism of the inorganic-gate ISFET is described in the following chapter, with emphasis on recent insights into interfacial phenomena occurring at the electrolyte-insulator interface, including the effects of various surface modification procedures. The inorganic-gate ISFET forms the basis of several other FET-based transducers including those which possess additional electroactive gate films (i.e.
"synopsis" may belong to another edition of this title.
Synopsis
This latest volume of Wilson & Wilson's Comprehensive Analytical Chemistry presents a comprehensive, up-to-date account of the theory, design and fabrication of ion-selective field-effect transistors (ISFETs) and their analytical and biomedical applications. It encompasses not only the physicochemical phenomena which control the interaction between the solid-state transducer and the contacting electrolyte, but also the interaction between the sensor and the associated electronic system used to process the resultant signal. The introductory chapter summarizes the history of the development of ISFET devices. After an account of the fundamental principles of the MOS field-effect transistor in Chapter 2, the operational mechanism of the inorganic-gate ISFET is described in the following chapter, with emphasis on recent insights into interfacial phenomena occurring at the electrolyte-insulator interface, including the effects of various surface modification procedures. The inorganic-gate ISFET forms the basis of several other FET-based transducers including those which possess additional electroactive gate films (i.e.
"About this title" may belong to another edition of this title.