Methods of Measurement for Semiconductor Materials, Process Control, and Devices: Quarterly Report, October 1 to December 31, 1972 (Classic Reprint) - Softcover
Synopsis
Excerpt from Methods of Measurement for Semiconductor Materials, Process Control, and Devices: Quarterly Report, October 1 to December 31, 1972
This quarterly progress report, eighteenth of a series, describes nbs activities directed toward the development of methods of measure ment for semiconductor materials, pfocess control, and devices. Sig nificant accomplishments during this reporting period include (1) com pletion of the investigation of the effects of current, probe force, and surface condition on the measurement of resistivity of bulk silicon wafers by the four - probe method, (2) establishment of Operating condi tions appropriate for determining the sensitivity of transient thermal response measutements to voids in transistor die attachment, and (3) initiatioh of ah interlaboratory comparison of transistor scattering parameter measurements. Because of the general applicability of the first of these, details are presented in a separate appendix. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation - recombination - trapping centers in sili con; study of gold - doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices; determination of 8 parameters, delay time, and related carrier transport properties in junction devices; development of a-c probing techniques; and character ization of noise and conversion loss of microwave detector diodes. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendices.
Key words: Base transit time; carrier lifetime; delay time; die attach ment; electricalfproperties; electronics; epitaxial silicon; four-probe method; generation centers; germanium; gold - doped silicon; infrared te spouse; methods of measurement; microelectronics; microwave diodes; probing techniques pull test, recombination centers; resistivity; resistivity standards; semiconductor devices; semiconductor materials; semiconductor process control; silicon; S-parameters; switching tran sients; thermal resistance; thermally stimulated measurements; trapping centers; wire bonds.
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Methods of Measurement for Semiconductor Materials, Process Control, and
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Paperback. Condition: New. Print on Demand. This book presents a detailed study of how defects in semiconductor materials and devices affect the performance, interchangeability, and reliability of discrete semiconductor devices and integrated circuits. The author explores established measurement methods while seeking to improve existing techniques and create new ones for the more reliable detection of defects that may lead to device failure. By focusing on the electrical properties of bulk silicon wafers, and the characterization of generation-recombination-trapping centers in silicon, the text provides valuable insights into controlling device fabrication. The author also examines gold-doped silicon and the use of infrared methods for detecting and counting impurity and defect centers in semiconductors, offering a comprehensive study from materials to methods. This book is an essential resource for professionals and researchers in the semiconductor industry, providing a deeper understanding of the factors influencing device performance and the techniques used to ensure reliability. This book is a reproduction of an important historical work, digitally reconstructed using state-of-the-art technology to preserve the original format. In rare cases, an imperfection in the original, such as a blemish or missing page, may be replicated in the book. print-on-demand item. Seller Inventory # 9780365536581_0
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