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Synopsis
The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.
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Synopsis
Based on a NATO ASI held July 1983 in San Miniato, Italy. Contributions identify key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium and quantum transport, interfacial and size constraints issues are also addressed. Annotation copyright Book News, Inc. Portland, Or.
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The Physics of Submicron Semiconductor Devices (NATO Science Series B:, 180)
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The Physics of Submicron Semiconductor Devices (Nato Science Series B:)
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Hardcover. Condition: Very Good. No DJ. Usual library markings. Binding is tight, text clean. Based on a NATO ASI held July 1983 in San Miniato, Italy. Contributions identify key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium and quantum transport, interfacial and size constraints issues are also addressed. Seller Inventory # 3002928
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Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibri. Seller Inventory # 5901542
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The Physics of Submicron Semiconductor Devices (NATO Science Series B:, 180)
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The Physics of Submicron Semiconductor Devices
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Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES. . 1 E. Constant BOLTZMANN TRANSPORT EQUATION. . . . 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES. 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES. 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES. 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION. . 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES. 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS. . 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION. 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES. 577 S. J. Allen, Jr. 748 pp. Englisch. Seller Inventory # 9780306429866
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The Physics of Submicron Semiconductor Devices
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Springer US, Springer US, 1989
ISBN 10: 0306429861
ISBN 13: 9780306429866
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES. . 1 E. Constant BOLTZMANN TRANSPORT EQUATION. . . . 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES. 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES. 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES. 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION. . 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES. 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS. . 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION. 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES. 577 S. J. Allen, Jr. Seller Inventory # 9780306429866
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The Physics of Submicron Semiconductor Devices
Published by
Springer US, Springer US Jan 1989, 1989
ISBN 10: 0306429861
ISBN 13: 9780306429866
New
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Buch. Condition: Neu. Neuware -The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES. . 1 E. Constant BOLTZMANN TRANSPORT EQUATION. . . . 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES. 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES. 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES. 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION. . 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES. 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS. . 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION. 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES. 577 S. J. Allen, Jr.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 748 pp. Englisch. Seller Inventory # 9780306429866
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The Physics of Submicron Semiconductor Devices (NATO Science Series B:, 180)
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