Presents a comprehensive treatment of materials aspects of GaAs, InP and related alloys used in the fabricating of photonic and electronic devices. It includes discussions on point defects and dislocations in III-V compounds. Coverage focuses on state-of-the-art materials growth and characterization; physics and chemistry of point defects; and dislocations and the connection between defects and device reliability.
"synopsis" may belong to another edition of this title.
Seller: BUCHSERVICE / ANTIQUARIAT Lars Lutzer, Wahlstedt, Germany
Condition: gut. 1991. Materials Aspects of Gaas and Inp Based Structures (Prentice Hall Advanced Reference Series) In englischer Sprache. pages. Seller Inventory # BN399947