Ultra-Low Voltage Nano-Scale Memories (Integrated Circuits and Systems) - Hardcover

Hardcover

ISBN 10: 0387333983 ISBN 13: 9780387333984

Publisher: Springer, 2007

Synopsis

Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed both to meet the needs of a rapidly growing mobile cell phone market and to offset a significant increase in the power dissipation of high-end microprocessor units. The goal of this book is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically discussed in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs.

About this title

Synopsis:

The goal of "Ultra-Low Voltage Nano-Scale Memories" is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically discussed in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length. Voltage scaling is prevented by many resulting problems, such as the ever-decreasing signal-to-noise-ratio and voltage margin of many tiny flip-flop circuits in a memory-cell array and peripheral circuits, and the ever-increasing leakage and variation in speed caused by variations in process, voltage, and temperature. The problems and promising solutions at device and circuit levels are discussed in detail through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve the problems with internal power-supply managements are widely and deeply discussed.

"Ultra-Low Voltage Nano-Scale Memories", based on the authors' extensive experience in memory and low-voltage designs in industry, bridging the different necessary technologies between memory, digital, and analog technologies, and even between DRAMs and SRAMs. A lot of knowledge that authors have acquired to date, and circuits that authors regard as important are covered from the basics to the state-of-the-art. Thus, the book is beneficial to students and engineers interested in ultra-low voltage nano-scale LSIs. Moreover, it is instructive not only for memory designers, but also for all digital and analog LSI designers who are the front edge of such LSI developments, since it is full of insight to develop such LSIs.

From the Back Cover:

Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.

About this edition

• Publisher: Springer
• Publication date: 2007
• ISBN 10: 0387333983
• ISBN 13: 9780387333984
• Binding: Hardcover
• Number of pages: 357
• Editor: Itoh Kiyoo, Horiguchi Masashi, Tanaka Hitoshi