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Published by Cambridge University Press CUP, 2011
ISBN 10: 1605112763ISBN 13: 9781605112763
Seller: Books Puddle, New York, NY, U.S.A.
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Condition: New. pp. ix + 207.
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Published by Springer, 2006
ISBN 10: 0387233490ISBN 13: 9780387233499
Seller: Romtrade Corp., STERLING HEIGHTS, MI, U.S.A.
Condition: New. Brand New Paperback International Edition.We Ship to PO BOX Address also. EXPEDITED shipping option also available for faster delivery.This item may ship from the US or other locations in India depending on your location and availability.
Published by Cambridge University Press, 2014
ISBN 10: 1107406838ISBN 13: 9781107406834
Seller: Lucky's Textbooks, Dallas, TX, U.S.A.
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Condition: New.
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Published by Springer, 2007
ISBN 10: 3540714901ISBN 13: 9783540714903
Seller: Basi6 International, Irving, TX, U.S.A.
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Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
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Published by Springer, 1998
ISBN 10: 0792350073ISBN 13: 9780792350071
Seller: BOOKWEST, Phoenix, AZ, U.S.A.
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Hardcover. Condition: Very Good. AS NEW: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices HC 1998 Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices (NATO Science Partnership Subseries: 3, 47) 1998th Edition by Eric Garfunkel (Editor), Evgeni Gusev (Editor), Alexander Vul' (Editor) OUR REFERENCE:128B3-0792350073-HC-2P2-lb-Wht-B45 DESCRIPTION An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science. Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology. Product details Publisher ‏ : ‎ Springer; 1998th edition (March 31, 1998) Language ‏ : ‎ English Hardcover ‏ : ‎ 518 pages ISBN-10 ‏ : ‎ 0792350073 ISBN-13 ‏ : ‎ 978-0792350071.
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Published by Springer, 2010
ISBN 10: 3642090710ISBN 13: 9783642090714
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Book Print on Demand
Condition: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book.
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Published by Springer, 2011
ISBN 10: 1441936122ISBN 13: 9781441936127
Seller: Ria Christie Collections, Uxbridge, United Kingdom
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Condition: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book.
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Published by Springer, 1998
ISBN 10: 0792350081ISBN 13: 9780792350088
Seller: booksXpress, Bayonne, NJ, U.S.A.
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Soft Cover. Condition: new.
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Published by Springer, 2010
ISBN 10: 904813806XISBN 13: 9789048138067
Seller: booksXpress, Bayonne, NJ, U.S.A.
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Soft Cover. Condition: new.
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Published by Springer, 2010
ISBN 10: 9048138051ISBN 13: 9789048138050
Seller: booksXpress, Bayonne, NJ, U.S.A.
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Hardcover. Condition: new. This item is printed on demand.
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Published by Springer, 2006
ISBN 10: 140204366XISBN 13: 9781402043666
Seller: booksXpress, Bayonne, NJ, U.S.A.
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Soft Cover. Condition: new.
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Published by Springer Netherlands, 2006
ISBN 10: 1402043651ISBN 13: 9781402043659
Seller: moluna, Greven, Germany
Book Print on Demand
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Research Workshop on Defects in Advanced High-K Dielectric Nano-Electronic Semiconductor Devices, St. Petersburg, Russia, from 11 to 14 July 2005. |To the best of our knowledge, this is the first focused collection of pap.
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