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Ion implantation into GaN and AlInN: An experimental study of ion implanted MOCVD grown Ga and AlIn nitrides - Softcover
A detailed and systematic study of ion implanted MOCVD grown wurtzite gallium nitride (GaN) and aluminum indium nitride (AlInN) is conducted. As-grown samples were characterized using XRD and Hall measurements to check the structural and electrical properties of the samples. Neon (Ne), manganese (Mn) and cerium (Ce) ions were implanted into the materials with different doses in ranges 1014−9x1015, 1014−5x1016 and 3x1014−2x1015cm-2 respectively. Using rapid thermal annealing (RTA) furnace implanted GaN samples were annealed at 800, 850, 900 and 1000oC and implanted AlInN samples were annealed at 750 and 850 oC for lattice recovery and activation of the dopants. Structural and optical characterizations were made using Rutherford backscattering spectroscopy (RBS), X-Ray diffraction (XRD), Photoluminescence (PL), Optical transmission and Raman scattering spectroscopy. Moreover, magnetic characterization of Mn and Ce implanted samples was also carried out with vibrating sample magnetometer (VSM) and superconducting quantum interference device (SQUID).
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Dr. Abdul Majid Sandhu, resident of Mandi Bahauddin, Pakistan is head of Physics Department in University of Gujrat (UOG), Gujrat, Pakistan. Prior to this he taught physics at college level for several years and worked as senior research scholar at Institute of semiconductor Physics, Chinese academy of sciences, Beijing, China.
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- PublisherLAP LAMBERT Academic Publishing
- Publication date2012
- ISBN 10 3845474998
- ISBN 13 9783845474991
- BindingPaperback
- Number of pages168
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Ion implantation into GaN and AlInN: An experimental study of ion implanted MOCVD grown Ga and AlIn nitrides
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Book Description Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -A detailed and systematic study of ion implanted MOCVD grown wurtzite gallium nitride (GaN) and aluminum indium nitride (AlInN) is conducted. As-grown samples were characterized using XRD and Hall measurements to check the structural and electrical properties of the samples. Neon (Ne), manganese (Mn) and cerium (Ce) ions were implanted into the materials with different doses in ranges 1014 9x1015, 1014 5x1016 and 3x1014 2x1015cm-2 respectively. Using rapid thermal annealing (RTA) furnace implanted GaN samples were annealed at 800, 850, 900 and 1000oC and implanted AlInN samples were annealed at 750 and 850 oC for lattice recovery and activation of the dopants. Structural and optical characterizations were made using Rutherford backscattering spectroscopy (RBS), X-Ray diffraction (XRD), Photoluminescence (PL), Optical transmission and Raman scattering spectroscopy. Moreover, magnetic characterization of Mn and Ce implanted samples was also carried out with vibrating sample magnetometer (VSM) and superconducting quantum interference device (SQUID). 168 pp. Englisch. Seller Inventory # 9783845474991
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Ion implantation into GaN and AlInN An experimental study of ion implanted MOCVD grown Ga and AlIn nitrides
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Ion implantation into GaN and AlInN An experimental study of ion implanted MOCVD grown Ga and AlIn nitrides
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Ion implantation into GaN and AlInN : An experimental study of ion implanted MOCVD grown Ga and AlIn nitrides
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Book Description Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - A detailed and systematic study of ion implanted MOCVD grown wurtzite gallium nitride (GaN) and aluminum indium nitride (AlInN) is conducted. As-grown samples were characterized using XRD and Hall measurements to check the structural and electrical properties of the samples. Neon (Ne), manganese (Mn) and cerium (Ce) ions were implanted into the materials with different doses in ranges 1014 9x1015, 1014 5x1016 and 3x1014 2x1015cm-2 respectively. Using rapid thermal annealing (RTA) furnace implanted GaN samples were annealed at 800, 850, 900 and 1000oC and implanted AlInN samples were annealed at 750 and 850 oC for lattice recovery and activation of the dopants. Structural and optical characterizations were made using Rutherford backscattering spectroscopy (RBS), X-Ray diffraction (XRD), Photoluminescence (PL), Optical transmission and Raman scattering spectroscopy. Moreover, magnetic characterization of Mn and Ce implanted samples was also carried out with vibrating sample magnetometer (VSM) and superconducting quantum interference device (SQUID). Seller Inventory # 9783845474991
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Ion implantation into GaN and AlInN
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Book Description Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Majid AbdulDr. Abdul Majid Sandhu, resident of Mandi Bahauddin, Pakistan is head of Physics Department in University of Gujrat (UOG), Gujrat, Pakistan. Prior to this he taught physics at college level for several years and worked as . Seller Inventory # 5484201
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