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Doping in III-V Semiconductors: 1 (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, Series Number 1) - Hardcover
Synopsis
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.
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Review
"Fred Schubert has written a book that very nicely fills two roles: It serves as a reference volume for those of us who use III-V materials, and it provides enlightening explanations of interesting and important problems in semi-conductor physics....His lucid explanations of some of the important physics of doped semiconductors is a major strength." David L. Miller, Physics Today
Book Description
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The various techniques and the key characteristics of dopants that are employed in III–V semiconductors are presented.
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- PublisherCambridge University Press
- Publication date1993
- ISBN 10 0521419190
- ISBN 13 9780521419192
- BindingHardcover
- Number of pages632
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Doping in III-V Semiconductors
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Doping in III-V Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, Series Number 1) [Hardcover] Schubert, E. F.
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Doping in III-V Semiconductors
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Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The various techniques and the key characteristics o. Seller Inventory # 446934854
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Doping of III-V semiconductor compounds is the basis of virtually all semiconductor heterostructures and all optoelectronic devices. This is the first book to provide a comprehensive and thorough treatment of the subject, examining both theoretical and experimental aspects, and including important material on delta-doping. The author is involved in research at one of the world's foremost microelectronics laboratories, and while assessing the current state of the art, he also provides valuable introductory material for those beginning studies or research in this field. Seller Inventory # 9780521419192
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Doping in III-V Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, Series Number 1)
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