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9780126738421: Organometallic Vapor-Phase Epitaxy,: Theory and Practice
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Organometallic Vapor-Phase Epitaxy describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices. It contains not only a fundamental description of the operation of the technique but also contains lists of data useful for the everyday operation of OMVPE reactors. It also offers specific recipes that can be used to produce a wide range of specific materials, structures, and devices.

  • Updated with new emphasis on the semiconducting nitride materials―GaN and its alloys with In and Al
  • Emphasizes the newly understood aspects of surface processes
  • Contains a new chapter, as well as several new sections in chapters on thermodynamics and kinetics

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About the Author:
Stringfellow was among the pioneers of the organometallic vapor phase epitaxial (OMVPE) growth technique, beginning his work in this area in 1975. He has published over 150 papers on this subject and delivered 30 invited papers at national and international conferences during the last 5 years. This work emphasizes the materials science aspects of OMVPE growth, including the thermodynamic and kinetic aspects of the process, the development of new source materials, and the growth of metastable alloys. The first epitaxial layers of InAsSb in the range of solid immiscibility. InPSb, GaPSb, GaInPSb, GaInAsSb, InAsBi, InSbBi, and InAsSbBi, inside the miscibility gap, were produced in Stringfellow’s group. The growth of immiscible alloys has led to the discovery of atomic scale ordering in many III/V alloys. He and his students recently demonstrated the control of domain size in these ordered materials by using grooves photolithographically produced on the (001) surface. This had resulted in the largest ordered domains ever produced in semiconductor materials. Current research focuses on the ordering mechanism, particularly the effects of surface structure on ordering.Other important work is involved with the development of new procedures for OMVPE. He and his students pioneered the now widely-used tertiarybutylarsine and tertiarybutylphosphine. They also used several other precursors for the first time, including: ethyldimethylindium, triisopropylantimony, triallylantimony, trivinylantimony, and tertiarybutyldimethylantimony.
From the Back Cover:
Organometallic vapor phase epitaxy is the major technique used for the commercial production of compound semiconductor materials for devices such as light emitting diodes, laser diodes, solar cells, photo cathodes, and many others. The use of this technique has been expanding rapidly during the last decade and has only recently reached a state of maturity. This is the only single-author book treating the entire scope of OMVPE from the fundamental aspects of the technique to applications for individual, specific materials, structures and devices. Thus, this book will be useful as a teaching tool for people unfamiliar with the field. It will be widely used as a text for advanced level epitaxial growth courses. It will also be useful for the practicing engineer using OMVPE—giving not only a description of the fundaments of OMVPE, but also lists of the characteristics of the technique, the properties of commonly used precursors, etc., as well as descriptions of specific recipes for the production of specific materials.

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  • PublisherAcademic Press
  • Publication date1999
  • ISBN 10 0126738424
  • ISBN 13 9780126738421
  • BindingHardcover
  • Edition number2
  • Number of pages250

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9780123911742: Organometallic Vapor-Phase Epitaxy: Theory and Practice

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