Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures: 115 (Topics in Applied Physics, 115) - Hardcover

Hardcover

ISBN 10: 354079364X ISBN 13: 9783540793649

Publisher: Springer, 2009

Synopsis

The spin degree-of-freedom is o?ering a wide range of intriguing oppor- nities both in fundamental as well as in applied solid-state physics. When combined with the rich and fertile physics of low-dimensional semicondu- ingstructuresandwiththepossibilitytochange,forexample,carrierdensity, electric ?elds or coupling to other quantum systems in a controlled way, an extremely exciting and interesting research ?eld is opened. Most comm- cial electronic devices are based on spin-independent charge transport. In the last two decades, however, scientists have been focusing on the ambitious objective of exploiting the spin degree-of-freedom of the electron to achieve novel functionalities. Ferromagnetic semiconductors, spin transistors, sing- spin manipulations or spin-torque MRAMs (magnetoresistive random access memories) are some of the hot topics. The importance of spin phenomena for new applications was recognized by the Royal Swedish Academy of S- ences by awarding the 2007 Nobel Prize in Physics jointly to Albert Fert and Peter Grun ¨ berg "for the discovery of giant magnetoresistance". This - fect originates from spin-dependent scattering phenomena in a two-terminal ferromagnetic-paramagnetic-ferromagnetic junction leading to a new type of magnetic memory. The Hall e?ect and its applications remain fertile - search areas. The spin Hall e?ect, in analogy with the conventional Hall e?ect, occurs in paramagnetic systems as a result of spin-orbit interaction.

About this title

From the Back Cover:

This book is devoted to the discussion of the state-of-the-art of spin resonance in low dimensional structures, such as two-dimensional electron systems, quantum wires, and quantum dots. World leading scientists in the field report on recent advances and discuss open issues and perspectives. Frontiers and opportunities for spin resonance techniques, with particular emphasis on fundamental physics, nanoelectronics, spintronics and quantum information processing, are discussed.

About the Author:

Marco Fanciulli is the Director of the CNR-INFM MDM (Materials and Devices for Microelectronics) National Laboratory and Full Professor at the Department of Material Science at the University of Milano Bicocca.

About this edition

• Publisher: Springer
• Publication date: 2009
• ISBN 10: 354079364X
• ISBN 13: 9783540793649
• Binding: Hardcover
• Number of pages: 275
• Editor: Fanciulli Marco