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Published by Taylor & Francis Ltd, 2021
ISBN 10: 103210628X ISBN 13: 9781032106281
Language: English
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Add to basketCondition: New. pages cm First edition Includes bibliographical references.
Published by Taylor & Francis Ltd, London, 2024
ISBN 10: 103210628X ISBN 13: 9781032106281
Language: English
Seller: CitiRetail, Stevenage, United Kingdom
Paperback. Condition: new. Paperback. The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure.This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics. The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices. This book contains experimental examples focusing on MOS and will be a reference for academics and postgraduates in the field of microelectronics. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
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Published by CRC Press 2021-10-05, 2021
ISBN 10: 1032106271 ISBN 13: 9781032106274
Language: English
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Published by Taylor & Francis Ltd, 2021
ISBN 10: 1032106271 ISBN 13: 9781032106274
Language: English
Seller: THE SAINT BOOKSTORE, Southport, United Kingdom
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Seller: GreatBookPricesUK, Woodford Green, United Kingdom
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Published by H N H International Limited, 2021
ISBN 10: 1032106271 ISBN 13: 9781032106274
Language: English
Seller: Majestic Books, Hounslow, United Kingdom
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Published by H N H International Limited, 2021
ISBN 10: 1032106271 ISBN 13: 9781032106274
Language: English
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Published by H N H International Limited, 2021
ISBN 10: 1032106271 ISBN 13: 9781032106274
Language: English
Seller: Biblios, Frankfurt am main, HESSE, Germany
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Add to basketCondition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Shengkai Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the University of Tokyo in 2011 and has been engaged in Ge, III-V, SiC in MOS technology. He has published more than 1.
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Add to basketTaschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices. This book contains experimental examples focusing on MOS and will be a reference for academics and postgraduates in the field of microelectronics.