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Edri Noa (17 results)
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Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 94.30
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Add to basketCondition: New. In.
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Condition: New.
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Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 104.30
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Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip
Language: English
Published by Springer International Publishing AG, CH, 2017
ISBN 10: 3319604015 ISBN 13: 9783319604015
Seller: Rarewaves.com USA, London, LONDO, United Kingdom
Seller rating 5 out of 5 stars
£ 138.28
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Add to basketHardback. Condition: New. 1st ed. 2018. This book pioneers the field of gain-cell embedded DRAM (GC-eDRAM) design for low-power VLSI systems-on-chip (SoCs). Novel GC-eDRAMs are specifically designed and optimized for a range of low-power VLSI SoCs, ranging from ultra-low power to power-aware high-performance applications. After a detailed review of prior-art GC-eDRAMs, an analytical retention time distribution model is introduced and validated by silicon measurements, which is key for low-power GC-eDRAM design. The book then investigates supply voltage scaling and near-threshold voltage (NTV) operation of a conventional gain cell (GC), before presenting novel GC circuit and assist techniques for NTV operation, including a 3-transistor full transmission-gate write port, reverse body biasing (RBB), and a replica technique for optimum refresh timing. Next, conventional GC bitcells are evaluated under aggressive technology and voltage scaling (down to the subthreshold domain), before novel bitcells for aggressively scaled CMOS nodes and soft-error tolerance as presented, including a 4-transistor GC with partial internal feedback and a 4-transistor GC with built-in redundancy.
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Hardcover. Condition: Brand New. 146 pages. 9.25x6.25x0.50 inches. In Stock.
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Condition: New. pp. 146.
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Paperback. Condition: Brand New. reprint edition. 146 pages. 9.25x6.10x0.36 inches. In Stock.
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Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip
Language: English
Published by Springer International Publishing AG, CH, 2017
ISBN 10: 3319604015 ISBN 13: 9783319604015
£ 126.12
£ 65 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketHardback. Condition: New. 1st ed. 2018. This book pioneers the field of gain-cell embedded DRAM (GC-eDRAM) design for low-power VLSI systems-on-chip (SoCs). Novel GC-eDRAMs are specifically designed and optimized for a range of low-power VLSI SoCs, ranging from ultra-low power to power-aware high-performance applications. After a detailed review of prior-art GC-eDRAMs, an analytical retention time distribution model is introduced and validated by silicon measurements, which is key for low-power GC-eDRAM design. The book then investigates supply voltage scaling and near-threshold voltage (NTV) operation of a conventional gain cell (GC), before presenting novel GC circuit and assist techniques for NTV operation, including a 3-transistor full transmission-gate write port, reverse body biasing (RBB), and a replica technique for optimum refresh timing. Next, conventional GC bitcells are evaluated under aggressive technology and voltage scaling (down to the subthreshold domain), before novel bitcells for aggressively scaled CMOS nodes and soft-error tolerance as presented, including a 4-transistor GC with partial internal feedback and a 4-transistor GC with built-in redundancy.
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Gain- Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip
Language: English
Published by Springer International Publishing, 2017
ISBN 10: 3319604015 ISBN 13: 9783319604015
Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides novel gain-cell embedded DRAM (GC-eDRAM) designs for various low-power VLSI SoC applicationsModels the statistical retention time distribution of GC-eDRAM and validates the model by silicon measurementsDescribes various memory op.
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Condition: New. Print on Demand.
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Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip
Language: English
Published by Springer International Publishing, 2018
ISBN 10: 3319868551 ISBN 13: 9783319868554
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides novel gain-cell embedded DRAM (GC-eDRAM) designs for various low-power VLSI SoC applicationsModels the statistical retention time distribution of GC-eDRAM and validates the model by silicon measurementsDescribes various memory op.
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Condition: New. PRINT ON DEMAND.
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Condition: New. Print on Demand pp. 146.
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Condition: New. PRINT ON DEMAND pp. 146.
