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Published by J Applied Physics, 1972
Seller: Larry W Price Books, Portland, OR, U.S.A.
Magazine / Periodical
Pamphlet. Condition: Very Good. Vol 43, No 3, pp. 1268-1273, Illus, 4to, Extracted from orig vol, thus begins with title page, trimmed & stapled pamphlet, else VG.
Published by Springer, 2004
ISBN 10: 3540407189ISBN 13: 9783540407188
Seller: Phatpocket Limited, Waltham Abbey, HERTS, United Kingdom
Book
Condition: Good. Used - Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre.' Ex-library, but has been well cared for. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.
Published by Springer, 2004
ISBN 10: 3540407189ISBN 13: 9783540407188
Seller: Byrd Books, Austin, TX, U.S.A.
Book
Hardcover. Condition: very good. In Used Condition.
Published by Singapore, Springer., 2020
ISBN 10: 9811512116ISBN 13: 9789811512117
Seller: Antiquariat im Hufelandhaus GmbH vormals Lange & Springer, Berlin, Germany
Book
2nd ed. 2020. XIV, 425 p. Hardcover. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Topics in Applied Physics, 131. Sprache: Englisch.
Published by Dordrecht, Springer., 2016
ISBN 10: 9402408398ISBN 13: 9789402408393
Seller: Antiquariat im Hufelandhaus GmbH vormals Lange & Springer, Berlin, Germany
Book
XVIII, 347 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.
Published by Singapore, Springer Singapore., 2021
ISBN 10: 9811512140ISBN 13: 9789811512148
Seller: Antiquariat im Hufelandhaus GmbH vormals Lange & Springer, Berlin, Germany
Book
2nd ed. 2020. 16 x 24 cm. XIV, 425 S. XIV, 425 p. 313 illus., 183 illus. in color. Softcover (Topics in Applied Physics). Sprache: Englisch.
Published by Springer, 2004
ISBN 10: 3540407189ISBN 13: 9783540407188
Seller: Wizard Books, Long Beach, CA, U.S.A.
Book
Hardcover. Condition: very good. Used.
Published by Springer, 2020
ISBN 10: 9811512116ISBN 13: 9789811512117
Seller: Book Deals, Tucson, AZ, U.S.A.
Book
Condition: Good. Good condition. This is the average used book, that has all pages or leaves present, but may include writing. Book may be ex-library with stamps and stickers.
Published by Springer Netherlands Jun 2018, 2018
ISBN 10: 9402414169ISBN 13: 9789402414165
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Book Print on Demand
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films. 368 pp. Englisch.
Published by Springer Nature, 2020
ISBN 10: 9811512116ISBN 13: 9789811512117
Seller: Revaluation Books, Exeter, United Kingdom
Book
Hardcover. Condition: Brand New. 2nd edition. 440 pages. 9.25x6.10x1.14 inches. In Stock.
Published by Springer Netherlands, 2018
ISBN 10: 9402414169ISBN 13: 9789402414165
Seller: moluna, Greven, Germany
Book Print on Demand
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Describes the development history, materials, fabrication methodologies, technical challenges and promising applications of FET-type ferroelectric memory devicesPresents a comprehensive review of past, present, and future technologies for the FET-.
Published by Springer, 2020
ISBN 10: 9811512116ISBN 13: 9789811512117
Seller: GF Books, Inc., Hawthorne, CA, U.S.A.
Book
Condition: Very Good. Book is in Used-VeryGood condition. Pages and cover are clean and intact. Used items may not include supplementary materials such as CDs or access codes. May show signs of minor shelf wear and contain very limited notes and highlighting.
Published by Springer, 2020
ISBN 10: 9811512116ISBN 13: 9789811512117
Seller: Book Deals, Tucson, AZ, U.S.A.
Book
Condition: Very Good. Very Good condition. Shows only minor signs of wear, and very minimal markings inside (if any).
Published by Springer, 2021
ISBN 10: 9811512140ISBN 13: 9789811512148
Seller: booksXpress, Bayonne, NJ, U.S.A.
Book
Soft Cover. Condition: new.
Published by Springer Netherlands, 2018
ISBN 10: 9402414169ISBN 13: 9789402414165
Seller: AHA-BUCH GmbH, Einbeck, Germany
Book
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Published by Springer Nature Singapore Mrz 2020, 2020
ISBN 10: 9811512116ISBN 13: 9789811512117
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Book Print on Demand
Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films. 440 pp. Englisch.
Published by Springer, 2021
ISBN 10: 9811512140ISBN 13: 9789811512148
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Book Print on Demand
Condition: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book.
Published by Springer, 2021
ISBN 10: 9811512140ISBN 13: 9789811512148
Seller: Lucky's Textbooks, Dallas, TX, U.S.A.
Book
Condition: New.
Published by Springer Singapore, 2020
ISBN 10: 9811512116ISBN 13: 9789811512117
Seller: moluna, Greven, Germany
Book Print on Demand
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Demonstrates that technology field of transistor-type ferroelectric memory has great impacts on both fundamental device physics and commercial industrial opportunitiesDeals with an insightful review to all the key technologies and applic.
Published by Springer Nature Singapore, 2020
ISBN 10: 9811512116ISBN 13: 9789811512117
Seller: AHA-BUCH GmbH, Einbeck, Germany
Book
Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Published by Springer Nature Singapore Mrz 2021, 2021
ISBN 10: 9811512140ISBN 13: 9789811512148
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Book Print on Demand
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films. 440 pp. Englisch.
Published by Springer Singapore, 2021
ISBN 10: 9811512140ISBN 13: 9789811512148
Seller: moluna, Greven, Germany
Book Print on Demand
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Demonstrates that technology field of transistor-type ferroelectric memory has great impacts on both fundamental device physics and commercial industrial opportunitiesDeals with an insightful review to all the key technologies and applic.
Published by Springer, 2018
ISBN 10: 9402414169ISBN 13: 9789402414165
Seller: Mispah books, Redhill, SURRE, United Kingdom
Book
paperback. Condition: New. New. book.
Published by Springer Nature Singapore, 2021
ISBN 10: 9811512140ISBN 13: 9789811512148
Seller: AHA-BUCH GmbH, Einbeck, Germany
Book
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Published by Springer, 2018
ISBN 10: 9402414169ISBN 13: 9789402414165
Seller: Revaluation Books, Exeter, United Kingdom
Book
Paperback. Condition: Brand New. reprint edition. 347 pages. 9.25x6.10x0.83 inches. In Stock.
Published by Springer Nature, 2021
ISBN 10: 9811512140ISBN 13: 9789811512148
Seller: Revaluation Books, Exeter, United Kingdom
Book
Paperback. Condition: Brand New. 2nd edition. 439 pages. 9.25x6.10x1.06 inches. In Stock.
Published by Springer, 2021
ISBN 10: 9811512140ISBN 13: 9789811512148
Seller: Russell Books, Victoria, BC, Canada
Book
Condition: New. Special order direct from the distributor.
Published by Springer, 2021
ISBN 10: 9811512140ISBN 13: 9789811512148
Seller: Mispah books, Redhill, SURRE, United Kingdom
Book
Paperback. Condition: New. New. book.
Published by Springer, 2020
ISBN 10: 9811512116ISBN 13: 9789811512117
Seller: Mispah books, Redhill, SURRE, United Kingdom
Book
Hardcover. Condition: New. New. book.
Published by Springer, 2004
ISBN 10: 3540407189ISBN 13: 9783540407188
Seller: GoldenWavesOfBooks, Fayetteville, TX, U.S.A.
Book
Hardcover. Condition: new. New. Fast Shipping and good customer service.