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SiC Power Materials

Zhe Chuan Feng

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ISBN 10: 3540206663 / ISBN 13: 9783540206668
Published by Springer-Verlag Gmbh Jun 2004, 2004
New Condition: Neu Buch
From Agrios-Buch (Bergisch Gladbach, Germany)

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About this Item

Neuware - In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D. TOC:Materials Science and Engineering of Bolk Silicon Carbides.- Fundamental Properties of SiC: Crystal Structure, Bonding Energy, Band Structure, and Lattice Vibration.- Sublimation Growth of SiC Single Crystals.- Crystal Growth of Silicon Carbide, Evaluation and Modeling.- Lattice Dynamics of Defects and Thermal Properties of 3C-SiC.- Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition.- Electron Paramagnetic Resonance Characterizatoin of SiC.- Material Selection and Interfacial Reaction in Ohmic Contact Formation on SiC.- Oxidation , MOS Capacitors, and MOSFETs.- 4H-SiC Power Switching Devices for Extreme Environment Applications.- SiC Nuclear Radiation Detectors. 450 pp. Englisch. Bookseller Inventory # 9783540206668

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Bibliographic Details

Title: SiC Power Materials

Publisher: Springer-Verlag Gmbh Jun 2004

Publication Date: 2004

Binding: Buch

Book Condition:Neu

About this title

Synopsis:

In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D. TOC:Materials Science and Engineering of Bolk Silicon Carbides.- Fundamental Properties of SiC: Crystal Structure, Bonding Energy, Band Structure, and Lattice Vibration.- Sublimation Growth of SiC Single Crystals.- Crystal Growth of Silicon Carbide, Evaluation and Modeling.- Lattice Dynamics of Defects and Thermal Properties of 3C-SiC.- Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition.- Electron Paramagnetic Resonance Characterizatoin of SiC.- Material Selection and Interfacial Reaction in Ohmic Contact Formation on SiC.- Oxidation , MOS Capacitors, and MOSFETs.- 4H-SiC Power Switching Devices for Extreme Environment Applications.- SiC Nuclear Radiation Detectors.

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