Stock Image

Reliability studies of GaN High Electron Mobility Transistors

Markus Csar

ISBN 10: 383960897X / ISBN 13: 9783839608975
Published by Fraunhofer Verlag Jun 2015, 2015
New Condition: Neu Taschenbuch
From Agrios-Buch (Bergisch Gladbach, Germany)

AbeBooks Seller Since 11 January 2012

Seller Rating 5-star rating

Quantity Available: 1

Available from more sellers

View all  copies of this book
Buy New
List Price:
Price: 42.76 Convert Currency
Shipping: 14.82 From Germany to U.S.A. Destination, Rates & Speeds
Add to basket

Payment Methods
accepted by seller

Visa Mastercard American Express

Check PayPal Invoice Bank/Wire Transfer

About this Item

Neuware - Most of our modern lifestyle is based on an ever expanding communication technology marked by higher frequencies and bandwidth. Nowadays used devices reach material limits and GaN possess intrinsic advantages to replace current technology. To serve as a considerable alternative, the reliability of GaN devices is a key factor. This thesis addresses the main physical degradation processes of state-of-the-art devices. The main problems of GaN are twofold: Due to the device realisation and operating conditions, large electric fields are appearing leading to a unique degradation pattern. Previous given explanation fails, and a new approach to overcome this problem could be shown in this work, alongside with solutions for field mitigation. 172 pp. Englisch. Bookseller Inventory # 9783839608975

Ask Seller a Question

Bibliographic Details

Title: Reliability studies of GaN High Electron ...

Publisher: Fraunhofer Verlag Jun 2015

Publication Date: 2015

Binding: Taschenbuch

Book Condition:Neu