Stock Image

The Internally Commutated Thyristor - Concept, Design and Application

Peter Köllensperger

ISBN 10: 3832299092 / ISBN 13: 9783832299095
Published by Shaker Verlag Apr 2011, 2011
New Condition: Neu Soft cover
From Agrios-Buch (Bergisch Gladbach, Germany)

AbeBooks Seller Since 11 January 2012

Quantity Available: 2

Buy New
Price: £ 46 Convert Currency
Shipping: £ 15.36 From Germany to U.S.A. Destination, Rates & Speeds
Add to basket

About this Item

Neuware - High-power semiconductors are key components in electrical drives, as their characteristics influence the performance of the complete drive system. Main aspects for semiconductor switches are low losses, high switching power, simple and low-power gate drive, simple-to-use housings and, last but not least, high reliability of semiconductor, driver and housing. After a presentation of the most important variants of thyristor-based semiconductors, the limiting influence of parasitics on the safe operating area is discussed in this thesis. A detailed analysis demonstrates the high demands imposed by unity-gain operation, especially on the stray inductance in the commutation loop. One major disadvantage of commercial IGCTs over IGBTs is the more complex gate driver. This aspect can be improved with the Internally Commutated Thyristor (ICT) that is introduced in this work. Compared with standard IGCTs, the key distinction is the integration of parts of the gate drive unit into the press-pack housing. The design process for these internal units, using DirectFET MOSFET and Multilayer Ceramic Capacitors, is given in this work. The theoretically derived excellent reliability of the internal gate drive parts could be verified by experiments with a purpose-built thermal-cycling test bench. Two different ICT devices were realized and tested in this work. The controllable turn-off current is improved by up to 35% compared to standard IGCTs. Purpose-built gate drive units complete the ICT-based high-power switch, which support cable connection between device and GDU and optionally feature a novel short-circuit detection circuit. Another device introduced in this thesis is the Dual GCT that consists of a parallel connection of two differently optimized GCTs on a single wafer and enables a significant performance increase. 220 pp. Englisch. Bookseller Inventory # 9783832299095

Ask Seller a Question

Bibliographic Details

Title: The Internally Commutated Thyristor - ...

Publisher: Shaker Verlag Apr 2011

Publication Date: 2011

Binding: Taschenbuch

Book Condition:Neu

Store Description

Visit Seller's Storefront

Terms of Sale:

Allgemeine Geschäftsbedingungen (

der Firma Agrios Buch- und Medienversand UG e.K. ,Geschäftsführer Ludwig Meier, De-Gasperi-Str. 8, 51469 Bergisch Gladbach nachstehend als Verkäufer bezeichnet.

§ 1 Allgemeines, Begriffsbestimmungen

(1) Der Verkäufer bietet unter dem Nutzernamen Agrios Buch unter der Plattform insbesondere Bücher an. Die folgenden Allgemeinen Geschäftsbedingungen (AGB) gelten für die Geschäftsbeziehung zwischen dem Verkäufer und dem Kunden in ihrer zum Ze...

More Information
Shipping Terms:

Der Versand ins Ausland findet IMMER mit DHL statt. Auch nach Österreich verschicken wir nur mit DHL! Daher Standardversand == Luftpost!

Detailed Seller Information

List this Seller's Books

Payment Methods
accepted by seller

Visa Mastercard American Express

Check PayPal Invoice Bank/Wire Transfer