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Advanced Physical Models for Silicon Device Simulation

Andreas Schenk

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ISBN 10: 3211830529 / ISBN 13: 9783211830529
Published by Springer-Verlag KG Jul 1998, 1998
New Condition: Neu
From Agrios-Buch (Bergisch Gladbach, Germany)

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Neuware - The quality of physical models is decisive for the understanding of the physical processes in semiconductor devices and for a reliable prediction of the behavior of a new generation of devices. The first part of the book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work, an extensive collection of widely used models is discussed in terms of physical accuracy and application results. The second part outlines the derivation of physics-based models for bulk mobility, band-to-band tunneling, defect-assisted tunneling, thermal recombination, non-ideal metal-semiconductor contact, and direct and multiphonon-assisted tunneling through insulating layers, all from a microscopic level. The models are compared with experimental data and applied to a number of simulation examples. This part also describes some new approaches of 'taylored quantum mechanics for deriving device models from 'first principles and the fundamental problems therein. 349 pp. Englisch. Bookseller Inventory # 9783211830529

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Title: Advanced Physical Models for Silicon Device ...

Publisher: Springer-Verlag KG Jul 1998

Publication Date: 1998

Binding: Buch

Book Condition:Neu

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From the reviews: "...this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal

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"... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field who wants to know what can and cannot be done, and a useful source of reference for experienced users ...? Microelectronics Journal

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