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Extreme Ultraviolet Lithography: Principles and Basic Technologies - Softcover

 
9786138959656: Extreme Ultraviolet Lithography: Principles and Basic Technologies

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This book describes the principles and basic technologies of extreme ultraviolet lithography (EUVL). The topics include why research on EUVL was begun and why an exposure wavelength of 13.5 nm was selected; the design of the optical system, which employs reflective mirror; the use of a multilayer film to make a reflective-type mask and how masks are inspected; an historical overview of the development of light sources; resist materials; and the recent performance of lithographic tools for mass production. Three innovations were key to the development: of Mo/Si multilayer films with a high reflectivity and to the shaping and metrology of aspherical mirrors with a precision of less than 0.1 nm. The technology for measuring figure error and the fabrication technology now meet the performance targets. Thus, EUVL has become the most practical lithographic technology for device fabrication at the less than 7-nm node.

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  • PublisherScholars' Press
  • Publication date2021
  • ISBN 10 6138959655
  • ISBN 13 9786138959656
  • BindingPaperback
  • LanguageEnglish
  • Number of pages196

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9783659827402: Extreme Ultraviolet Lithography: Principles and Basic Technologies

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ISBN 10:  3659827401 ISBN 13:  9783659827402
Publisher: LAP LAMBERT Academic Publishing, 2016
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book describes the principles and basic technologies of extreme ultraviolet lithography (EUVL). The topics include why research on EUVL was begun and why an exposure wavelength of 13.5 nm was selected; the design of the optical system, which employs reflective mirror; the use of a multilayer film to make a reflective-type mask and how masks are inspected; an historical overview of the development of light sources; resist materials; and the recent performance of lithographic tools for mass production. Three innovations were key to the development: of Mo/Si multilayer films with a high reflectivity and to the shaping and metrology of aspherical mirrors with a precision of less than 0.1 nm. The technology for measuring figure error and the fabrication technology now meet the performance targets. Thus, EUVL has become the most practical lithographic technology for device fabrication at the less than 7-nm node. Seller Inventory # 9786138959656

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