Items related to Simulation of Semiconductor Processes and Devices 2001:...
Synopsis
Macroscopic Quantum Carrier Transport Modeling.- Atomistic Front-End Process Modelling: A Powerful Tool for Deep-Submicron Device Fabrication.- Monte Carlo Impurity Diffusion Simulation Considering Charged Species.- A Novel Model for Boron Diffusion in SiGe Strained Layers Based on a Kinetics Driven Ge-B Pairing Mechanism.- The Role of Incomplete Interstitial-Vacancy Recombination on Silicon Amorphization.- Atomistic Simulations of Extrinsic-Defects Evolution and Transient Enhanced Diffusion in Silicon.- Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach.- Local Iterative Monte Carlo Investigation of the Influence of Electron-Electron Scattering on Short Channel Si-MOSFETs.- Simplified Inelastic Acoustic-Phonon Hole Scattering Model for Silicon.- An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects.- Density of States and Group Velocity Calculations for SiO2.- Investigation of Spurious Velocity Overshoot Using Monte Carlo Data.- Elasto-Plastic Modeling of Microelectronics Materials for Accurate Prediction of the Mechanical Stresses in Advanced Silicon Technologies.- A Unified Model of Dopant Diffusion in SiGe.- A Simple Modeling and Simulation of Complete Suppression of Boron Out-Diffusion in Si1-xGex, by Carbon Insertion.- On the Effect of Local Electronic Stopping on Ion Implantation Profiles in Non-Crystalline Targets.- Dynamics of p+ Polysilicon Gate Depletion due to the Formation of Boron Compounds in TiSi2.- Analysis of Statistical Fluctuations due to Line Edge Roughness in Sub-0.1 µm MOSFETs.- Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective Potential.- Finite Element Simulation of 2D Quantum Effects in Ultra Short Channel MOSFETs with High-K Dielectric Gates.- Decananometer FDSOI Device Optimization Including Random Variation.- Fully 2D Quantum-Mechanical Simulation of Nanoscale MOSFETs.- Ab-initio Electrodynamic Modeling of On-Chip Back-End Structures.- Analysis of Hot-Carrier-Induced Oxide Degradation in MOSFETs by Means of Full-Band Monte Carlo Simulation.- Acceleration of Lattice Monte Carlo Simulations and Application to Diffusion/Clustering of As at High Concentrations.- Interstitial Cluster Evolution and Transient Phenomena in Si-Crystal.- Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD.- Equipment and Process Simulation of Compound Semiconductor MOCVD in the Production Scale Multiwafer Planetary Reactor.- Numerical Simulation of Non-Equilibrium, Ultra-Rapid Heating of Si-Thin films by Nanosecond-Pulse Excimer Laser.- 2D Hierarchical Radio-Frequency Noise Modeling Based on a Langevin-Type Drift-Diffusion Model and Full-Band Monte-Carlo Generated Local Noise Sources.- Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation.- Analysis of Gate Tunneling Current in MOS Structures using Quantum Mechanical Simulation.- 2-D Self-Consistent Solution of Schrödinger Equation, Boltzmann Transport Equation, Poisson and Current-continuity Equation for MOSFET.- Boundary Condition Models for Terminal Current Fluctuations.- Electron velocity in sub-50 nm channel MOSFETs.- 3D Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Introduced by Discrete Dopants, Oxide Thickness Fluctuations and LER.- Modeling of Reactive Ion Etching for Si/SiO2 Systems.- Simulation and Prediction of Aspect Ratio Dependent Phenomena during SiO2 and Si Feature Etching in Fluorocarbon Plasmas.- System Level Modeling of an Electrostatic Torsional Actuator.- Impact of Substrate Resistance on Drain Current Noise in MOSFETs.- An Efficient Frequency-Domain Analysis Technique of MOSFET Operation.- Modeling of Bias Dependent Fluctuations of Flicker Noise of MOSFETs.- Compact MOS Modeling for RF CMOS Circuit Simulation.- Statistical Analysis of VLSI Using TCAD.- Numerical Modeling of Impact-Ionization Effects on Gate-Lag Phenomena in GaAs MESFETs.- Monte Carlo Simulation of Multi-Band C
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