The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
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Analysis and Simulation of Heterostructure Devices Deals with the physical modeling of heterostructure devices. This book presents a detailed discussion of physical models and parameters for compound semiconductors including the relevant aspects of modern submicron heterostructure devices.
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Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices. 324 pp. Englisch. Seller Inventory # 9783211405376
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