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The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
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Analysis and Simulation of Heterostructure Devices Deals with the physical modeling of heterostructure devices. This book presents a detailed discussion of physical models and parameters for compound semiconductors including the relevant aspects of modern submicron heterostructure devices.
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- PublisherSpringer
- Publication date2003
- ISBN 10 3211405372
- ISBN 13 9783211405376
- BindingHardcover
- Number of pages309
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Analysis and Simulation of Heterostructure Devices (Computational Microelectronics) by Palankovski, Vassil, Quay, Rüdiger [Hardcover ]
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Analysis and Simulation of Heterostructure Devices
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Analysis and Simulation of Heterostructure Devices
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Analysis and Simulation of Heterostructure Devices (Computational Microelectronics)
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Analysis and Simulation of Heterostructure Devices
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Book Description Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices. 324 pp. Englisch. Seller Inventory # 9783211405376
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Analysis and Simulation of Heterostructure Devices
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Book Description Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. First full and comprehensive modeling of relevant compound semiconductorsVerified by precise simulation of real-state-of-the-art devices in over 25 different simulation examplesBridges the gap between theory and applications with a large nu. Seller Inventory # 4487893
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Analysis and Simulation of Heterostructure Devices
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Book Description Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented. Seller Inventory # 9783211405376
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Analysis and Simulation of Heterostructure Devices
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Book Description Condition: New. Deals with the physical modeling of heterostructure devices. This book presents a detailed discussion of physical models and parameters for compound semiconductors including the relevant aspects of modern submicron heterostructure devices. Series: Computational Microelectronics. Num Pages: 289 pages, biography. BIC Classification: TJFD5. Category: (G) General (US: Trade); (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 156 x 19. Weight in Grams: 631. . 2003. Hardback. . . . . Seller Inventory # V9783211405376
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Analysis and Simulation of Heterostructure Devices
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Book Description Condition: New. Deals with the physical modeling of heterostructure devices. This book presents a detailed discussion of physical models and parameters for compound semiconductors including the relevant aspects of modern submicron heterostructure devices. Series: Computational Microelectronics. Num Pages: 289 pages, biography. BIC Classification: TJFD5. Category: (G) General (US: Trade); (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 156 x 19. Weight in Grams: 631. . 2003. Hardback. . . . . Books ship from the US and Ireland. Seller Inventory # V9783211405376
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