Items related to Gate Stack and Silicide Issues in Silicon: Volume 670...
Synopsis
As technologists consider scaling microelectronic devices below the 100nm node, it is clear that many new materials will be introduced into the fab line. Determining the best materials and the best processing techniques are extremely challenging tasks. Much of this book, first published in 2002, attempts to find a replacement for silicon dioxide. Hafnium dioxide, zirconium dioxide, and their silicates and aluminates are the subjects of intense scrutiny, but other materials are being considered as well. Obtaining a suitable large capacitance, while simultaneously obtaining low charge density in the film, and finding a material that has adequate thermal stability is proving difficult. Real-time electron microscopy of metal-silicon reactions is providing valuable new insights. Topics include: high-K materials; processing of high-K gate dielectrics; gate stack and silicide issues in Si processing; electrical performance of novel gate dielectrics; novel gate structures; novel silicide processes; and shallow junctions and integration issues in FEOL.
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Book Description
As technologists consider scaling microelectronic devices below the 100nm node, it is clear that many new materials will be introduced into the fab line. Determining the best materials and the best processing techniques are extremely challenging tasks. Much of this book, first published in 2002, attempts to find a replacement for silicon dioxide.
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Gate Stack and Silicide Issues in Silicon Processing II : Symposium Held April 17-19, 2001, San Francisco, California, U. S. A.
Published by
Materials Research Society, Warrendale, Pennsylvania, 2002
ISBN 10: 1558996060
ISBN 13: 9781558996069
Used
Hardcover
First Edition
Seller: Literary Cat Books, Machynlleth, Powys, WALES, United Kingdom
Seller rating 4 out of 5 stars
Original Boards. Condition: As New. Dust Jacket Condition: No Dust Jacket. First Edition; First Edition. With illustrations. Stamped Damaged to verso title page. Otherwise new. ; Hardcover; Octavo; As technologists consider scaling microelectronic devices below the 100nm node, it is clear that many new materials will be introduced into the fab line. Determining the best materials and the best processing techniques are extremely challenging tasks. Much of this book, first published in 2002, attempts to find a replacement for silicon dioxide. Hafnium dioxide, zirconium dioxide, and their silicates and aluminates are the subjects of intense scrutiny, but other materials are being considered as well. Obtaining a suitable large capacitance, while simultaneously obtaining low charge density in the film, and finding a material that has adequate thermal stability is proving difficult. Real-time electron microscopy of metal-silicon reactions is providing valuable new insights. Topics include: high-K materials; processing of high-K gate dielectrics; gate stack and silicide issues in Si processing; electrical performance of novel gate dielectrics; novel gate structures; novel silicide processes; and shallow junctions and integration issues in FEOL. Seller Inventory # 21203
Quantity: 1 available
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Gate Stack and Silicide Issues in Silicon: Volume 670 (MRS Proceedings)
Published by
Cambridge University Press, 2002
ISBN 10: 1558996060
ISBN 13: 9781558996069
Used
Hardcover
Seller: dsmbooks, Liverpool, United Kingdom
Seller rating 4 out of 5 stars
hardcover. Condition: Very Good. Very Good. book. Seller Inventory # D8S0-3-M-1558996060-3
Quantity: 1 available