Si Front End Processing – Physics and Technology II of Dopant-Defect Interactions II: Volume 610 (MRS Proceedings) - Hardcover

Hardcover

ISBN 10: 1558995188 ISBN 13: 9781558995185

Publisher: Cambridge University Press, 2001

Synopsis

This book, first published in 2001, focuses on the formation of electrical junctions in the front-end processing of devices sized for the approaching end-of-the-roadmap. To address these issues researchers come together to share results and physical models that describe phenomena which control the three-dimensional dopant profile. Highlights focus on future issues in device scaling and how they can be quantitatively linked with the requirements placed on dopant profile and junction formation. Emphasis is on shallow junction depth and high-concentration activation as well as the extremely tight limits on junction abruptness. An excellent overview of the field of implant and annealing in silicon devices is also provided. Topics include: the challenges of device scaling; 2-D dopant characterization; Si front-end processing; ion implantation and shallow junction technology; group III dopant diffusion and activation; carbon diffusion and interaction with point defects; group V diffusion and activation; vacancy-type defects - interaction and characterization; regrown amorphous layers and structure and properties of point and extended defects.

About this title

Book Description:

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2001, focuses on the formation of electrical junctions in the front-end processing of devices sized for the approaching end-of-the-roadmap.

About this edition

• Publisher: Cambridge University Press
• Publication date: 2001
• ISBN 10: 1558995188
• ISBN 13: 9781558995185
• Binding: Hardcover
• Number of pages: 440
• Editor: Agarwal Aditya, Pelaz Lourdes, Vuong Hong-Ha, Packan Paul, Kase Masataka