Items related to MOS Interface Physics, Process and Characterization
Synopsis
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure.
This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability.
This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.
"synopsis" may belong to another edition of this title.
About the Author
Shengkai Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the University of Tokyo in 2011 and has been engaged in Ge, III-V, SiC in MOS technology. He has published more than 100 papers and authorized 40+ patents.
Xiaolei Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences in 2013 and has been engaged in Si/Ge based MOS technology. He has published more than 100 papers.
"About this title" may belong to another edition of this title.
Search results for MOS Interface Physics, Process and Characterization
Stock Image
Mos Interface Physics, Process and Characterization
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: New. Seller Inventory # 47204567-n
Quantity: Over 20 available
Stock Image
MOS Interface Physics, Process and Characterization
Published by
Taylor & Francis Ltd, 2021
ISBN 10: 103210628X
ISBN 13: 9781032106281
New
Paperback / softback
Seller: THE SAINT BOOKSTORE, Southport, United Kingdom
Seller rating 5 out of 5 stars
Paperback / softback. Condition: New. New copy - Usually dispatched within 4 working days. 500. Seller Inventory # B9781032106281
Quantity: 1 available
Stock Image
MOS interface physics, process and characterization
Seller: Majestic Books, Hounslow, United Kingdom
Seller rating 5 out of 5 stars
Condition: New. pages cm. Seller Inventory # 398689214
Quantity: 3 available
Stock Image
MOS Interface Physics, Process and Characterization
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
Condition: New. In. Seller Inventory # ria9781032106281_new
Quantity: Over 20 available
Stock Image
MOS Interface Physics, Process and Characterization
Print on DemandSeller: PBShop.store UK, Fairford, GLOS, United Kingdom
Seller rating 5 out of 5 stars
PAP. Condition: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Seller Inventory # L0-9781032106281
Quantity: Over 20 available
Stock Image
Mos Interface Physics, Process and Characterization
Print on DemandSeller: Revaluation Books, Exeter, United Kingdom
Seller rating 5 out of 5 stars
Paperback. Condition: Brand New. 174 pages. 9.00x6.00x0.40 inches. In Stock. This item is printed on demand. Seller Inventory # __103210628X
Quantity: 1 available
Stock Image
MOS Interface Physics, Process and Characterization (Paperback)
Published by
Taylor & Francis Ltd, London, 2024
ISBN 10: 103210628X
ISBN 13: 9781032106281
New
Paperback
Seller: CitiRetail, Stevenage, United Kingdom
Seller rating 5 out of 5 stars
Paperback. Condition: new. Paperback. The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure.This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics. The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices. This book contains experimental examples focusing on MOS and will be a reference for academics and postgraduates in the field of microelectronics. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Seller Inventory # 9781032106281
Quantity: 1 available
Stock Image
MOS Interface Physics, Process and Characterization
Print on DemandSeller: PBShop.store US, Wood Dale, IL, U.S.A.
Seller rating 5 out of 5 stars
PAP. Condition: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Seller Inventory # L0-9781032106281
Quantity: Over 20 available
Stock Image
Mos Interface Physics, Process and Characterization
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: As New. Unread book in perfect condition. Seller Inventory # 47204567
Quantity: Over 20 available
Stock Image
MOS interface physics, process and characterization
Seller: Books Puddle, New York, NY, U.S.A.
Seller rating 4 out of 5 stars
Condition: New. pages cm First edition Includes bibliographical references. Seller Inventory # 26397687905
Quantity: 4 available