Pengelly: ∗microwave∗ Field Effect Transistors – Theory Design & Applications 2ed: Theory Design and Applications - Hardcover

Pengelly, Rs

Hardcover

ISBN 10: 0863800408 ISBN 13: 9780863800405

Publisher: Wiley–Blackwell, 1986

Synopsis

This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations. Perhaps the most comprehensive text on GaAs FET technology and its practical application. It covers the use of MESFET devices in microwave circuits, such as low-noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. This text is a classic reference for all engineers involved in the development of solid state microwave devices.

About this title

Synopsis

This book has been substantially revised, expanded and updated from the first edition: only the introduction, concerning the basic physics, remains unchanged. The contents cover the theory, design and applications of gallium arsenide and related III-V compound field effect transistors. Most emphasis is placed on the GaAs metal semiconductor Schottky barrier FET and its role in microwave circuits. However, chapters are also devoted to other active devices such as high electron mobility transistors on AlGaAs together with extensive treatments on microwave and digital integrated circuits. Each chapter contains a number of examples illustrating theoretical approaches or applications.

Edition details

• Publisher: Wiley–Blackwell
• Publication date: 1986
• Language: English
• ISBN 10: 0863800408
• ISBN 13: 9780863800405
• Binding: Hardcover
• Edition number: 2
• Number of pages: 658